Thailand

STP100N8F6 100A 80V 100N8F6 TO-220 N-channel 80 V, 0.008 typ., 100 A,
Datasheet
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- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss


Applications
- Switching applications


Description
This device is an N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.